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2012年9月4日 — 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. R DS(on)=f(T j); I D=0.3 A; V GS=10 V. V GS(th)=f(T j); V DS=VGS; ...
2N7000,2N7002.Electricalratings.3/14.1.Electricalratings.Table2.Absolutemaximumratings.Symbol.Parameter.Value.Unit.TO-92.SOT23-3L.VDS.Drain- ...
2N7000-D26Z.2N7000.TO-923L.TapeandReel.2000/2000.2N7002.702...coveragemaybeaccessedatwww.onsemi.com/site/pdf/Patent-Marking.pdf.
PleaseseeAP02001athttp://www.diodes.com/datasheets/ap02001.pdfforthelatestversion.SOT23.DimMinMax.Typ.A.0.370.510.40.B.1.201.401.30.C.
2N7002.PackageOutlineDimensions.PleaseseeAP02002athttp://www.diodes.com/datasheets/ap02002.pdfforlatestversion.SuggestedPadLayout.
2N7002.60V,300mAN-channelTrenchMOSFET.Rev.7—8September2011.Productdatasheet.Table1.Quickreferencedata.Symbol.Parameter.
2011年9月8日—InaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).Symbol.Parameter.Conditions.Min.Max.Unit.VDSdrain-source ...
2N7002ONSemiconductor/FairchildMOSFETN-CHANNEL60V115mA資料...ARevisedMOSFETModelWithDynamicTemperatureCompensation(PDF) ...
2N7002;Mouser編號：.512-2N7002;規格書:2N7002規格書(PDF)·下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於ECAD型號的資訊。;ECAD模型:·下載免費的庫 ...
LowOn-Resistance.•LowGateThresholdVoltage.•LowInputCapacitance.•FastSwitchingSpeed.•SmallSurfaceMountPackage.•.TotallyLead-Free ...
TheCENTRALSEMICONDUCTOR2N7002typeisan.N-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsed ...
2N7002,215NexperiaMOSFETN-CHTRNCH60V300MA資料表、庫存和定價。...UnderstandingPowerMOSFETDatasheetParameters(v.1.0)(PDF) ...
2N7002-7-FDiodesIncorporatedMOSFET60V200mW資料表、庫存和...2N7002-7-F資料表(PDF)...瞭解更多關於DiodesIncorporated2N7002-7-F的資訊.
coveragemaybeaccessedatwww.onsemi.com/site/pdf/Patent-Marking.pdf.ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoany ...
THERMALCHARACTERISTICSValuesareatTC=25°Cunlessotherwisenoted.Symbol.Parameter.Value.Unit.2N7000.2N7002.NDS7002A.RθJA.ThermalResistance ...
2N7000,2N7002,.NDS7002A.Description.TheseN−channelenhancementmodefieldeffecttransistorsareproducedusingonsemi'sproprietary, ...
TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.Thisdeviceissuitableforuse ...