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A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal passive semiconductor electronic component, with negative resistance, used in high-frequency electronics. It is based on the "Gunn effect" dis
ItisbasedontheGunneffectdiscoveredin1962byphysicistJ.B.Gunn.Itslargestuseisinelectronicoscillatorstogeneratemicrowaves, ...
Thisdiodeisanegativedifferentialresistancedevice,whichisfrequentlyusedasalow-poweroscillatortogeneratemicrowaves.ItconsistsofonlyN-typesemiconductorinwhichelectronsarethemajoritychargecarriers.Tog...
TheGunnEffectcanbedefinedasgenerationofmicrowavepower(powerwithmicrowavefrequenciesofaroundafewGHz)wheneverthevoltageappliedtoa...
Gunneffectsynonyms,Gunneffectpronunciation,Gunneffecttranslation,EnglishdictionarydefinitionofGunneffect.n.Theproductionofmicrowaveoscillations...
DefineGunneffect.Gunneffectsynonyms,Gunneffectpronunciation,Gunneffecttranslation,EnglishdictionarydefinitionofGunneffect.n.Theproductionofmicrowaveoscillationswhenaconstantvoltageinexcessofacriti...
producingnegativeresistance.Atwo-terminaldevicemadefromsuchamaterialcanproducemicrowaveoscillations,thefrequencyofwhichisprimarilydeterminedbythecharacteristicsofthespecimenofthematerialandnotbyan...
WhatistheGunnEffect?...Thehigh-frequencyoscillationoftheelectriccurrentthatisflowingthroughthesemiconductingsolidsisknownastheGunneffect.
Gunneffectdefinition:aphenomenonobservedinsomesemiconductorsinwhichasteadyelectricfieldof...|Meaning,pronunciation,translationsand...
Gunneffectdefinition:aphenomenonobservedinsomesemiconductorsinwhichasteadyelectricfieldof...|Meaning,pronunciation,translationsandexamples.
Gunneffectandtoexamineamodelforthephenomenon.1-3.Thiseffect,firstobservedbyGunninsamplesofn-typeGaAs,isatimeinstabilityinthe ...
DefineGunneffect:theproductionofrapidfluctuationsofcurrentwhenthevoltageappliedtoasemiconductordeviceexceedsacriticalvaluewith…
DefineGunneffect:theproductionofrapidfluctuationsofcurrentwhenthevoltageappliedtoasemiconductordeviceexceedsacriticalvaluewith…
Gunneffect:High-frequencyoscillationofelectricalcurrentflowingthroughcertainsemiconductingsolids.Theeffectisusedinasolid-statedevice,theGunn...
ThisGunnEffectisinstrumentalinthegenerationofmicrowaveoscillationsinbulksemiconductormaterials.TheeffectwasfoundbyGunntobeexhibitedby ...
2023年8月1日—Gunneffect,high-frequencyoscillationofelectricalcurrentflowingthroughcertainsemiconductingsolids.Theeffectisusedina ...
13Sep2002...TheGunnEffectwasdiscoveredbyJ.B..GunnofIBMin1963.TheGunnDiode.Incertainsemiconductors,notablyGaAs,electronscanexistin...
由KWPontinen著作·1972·被引用1次—WehavedemonstratedthatonecanbuildafrequencysweptEPRspectrometerutilizingtheGunn-effectdiode.Thisspectrometerwhichusesatunablereentrant ...
由JVoelcker著作·1989·被引用11次—ThenoiseGunnnotedon.Feb.19wasthefirsthintofwhatwouldlaterbeknownastheGunneffect.BythatNovember,betterinstrumentsandpurerspecimens ...
Amazon.com:TheGunneffect(Monographsinelectricalandelectronicengineering):9780198593188:Hobson,G.S:圖書.
Microwavecurrentoscillationsinn-typepolarsemiconductorsathighelectricfieldswerefirstobservedbyGunnin1963.Thebasicphysicalmechanism...
由JVoelcker著作·1989·被引用10次—TheresearchthatleduptothediscoveryoftheGunneffectisdescribedbytheauthor.Abriefexplanationoftheeffectisgiven,andthepresentuseof ...
由HLHartnagel著作·1969·被引用44次—Abstract-ArangeofimportantaspectsofGunn-effectpulse-processingdeviceshasbeenstudied.Appreciablepulsegaincanbeobtainedforcorrectlychosen ...
InmaterialsdisplayingtheGunneffect,suchasgalliumarsenideorcadmiumsulfide,electronscanexistintwostatesofmobility,oreaseofmovement.Electronsinthestateofhighermobilitymovethroughthesolidmoreeasilytha...
電子轉移效應又稱作耿氏效應(gunneffect)基於Ⅲ-Ⅴ族化合物半導體中電子在導帶中從主能谷轉移到子能谷而產生負微分遷移率而製成的實用性器件﹐又稱耿氏效應...
甘恩二極體的理論基礎是甘恩效應（Gunneffect），兩個命名中「甘恩」都是來自於IBM物理學家J.B.甘恩（英語：J.B.Gunn），他在1962年發現了這一效應 ...
耿氏二极管（英语：Gunndiode，港澳作耿氏二極體，台湾作甘恩二極體、剛氏二極體），或称转移...耿氏二极管的理论基础是耿氏效应（Gunneffect），两个命名中“耿氏”都是来自于IBM物理学家J.B.甘恩（英语：J.B.Gun...